What Does Ferroelectric Random Access Memory (FRAM) Mean?
Ferroelectric random-access memory (FRAM, F-RAM or FeRAM) is a form of non-volatile memory similar to DRAM in architecture. However, it makes use of a ferroelectric layer in place of a dielectric layer in order to attain non-volatility. Considered as one potential alternative for non-volatile random-access memory technologies, ferroelectric random-access memory provides the same features as that of flash memory.
Techopedia Explains Ferroelectric Random Access Memory (FRAM)
In spite of the name, ferroelectric random-access memory does not actually contain any iron. It noramlly uses lead zirconate titanate, though other materials are also sometimes used. Although development of ferroelectric RAM dates back to the early days of semiconductor technology, the first devices based on ferroelectric RAM were produced around 1999. A ferroelectric RAM memory cell is comprised of a bit line as well as a capacitor connected to a plate. The binary values 1 or 0 are stored based on the orientation of the dipole within the capacitor. The orientation of the dipole can be set and reversed with the help of voltage.
